Download e-book for iPad: Advanced Interconnects for ULSI Technology by Mikhail Baklanov, Paul S. Ho, Ehrenfried Zschech

By Mikhail Baklanov, Paul S. Ho, Ehrenfried Zschech

ISBN-10: 0470662549

ISBN-13: 9780470662540

ISBN-10: 1119963672

ISBN-13: 9781119963677

Discovering new fabrics for copper/low-k interconnects is important to the continued improvement of machine chips. whereas copper/low-k interconnects have served good, making an allowance for the production of extremely huge Scale Integration (ULSI) units which mix over 1000000000 transistors onto a unmarried chip, the elevated resistance and RC-delay on the smaller scale has turn into a significant component affecting chip functionality.

Advanced Interconnects for ULSI Technology is devoted to the fabrics and techniques that can be compatible replacements. It covers a huge variety of themes, from actual ideas to layout, fabrication, characterization, and alertness of recent fabrics for nano-interconnects, and discusses:

  • Interconnect features, characterisations, electric homes and wiring specifications
  • Low-k fabrics: basics, advances and mechanical  homes
  • Conductive layers and obstacles
  • Integration and reliability together with mechanical reliability, electromigration and electric breakdown
  • New techniques together with 3D, optical, instant interchip, and carbon-based interconnects

Intended for postgraduate scholars and researchers, in academia and undefined, this ebook presents a serious assessment of the allowing know-how on the center of the longer term improvement of computing device chips.

Content:
Chapter 1 Low?k fabrics: fresh Advances (pages 1–33): Geraud Dubois and Willi Volksen
Chapter 2 Ultra?Low?k through CVD: Deposition and Curing (pages 35–77): Vincent Jousseaume, Aziz Zenasni, Olivier Gourhant, Laurent Favennec and Mikhail R. Baklanov
Chapter three Plasma Processing of Low?k Dielectrics (pages 79–128): Hualiang Shi, Denis Shamiryan, Jean?Francois de Marneffe, Huai Huang, Paul S. Ho and Mikhail R. Baklanov
Chapter four rainy fresh functions in Porous Low?k Patterning procedures (pages 129–171): Quoc Toan Le, man Vereecke, Herbert Struyf, Els Kesters and Mikhail R. Baklanov
Chapter five Copper Electroplating for On?Chip Metallization (pages 173–191): Valery M. Dubin
Chapter 6 Diffusion boundaries (pages 193–234): Michael Hecker and Rene Hubner
Chapter 7 technique Integration of Interconnects (pages 235–265): Sridhar Balakrishnan, Ruth mind and Larry Zhao
Chapter eight Chemical Mechanical Planarization for Cu–Low?k Integration (pages 267–289): Gautam Banerjee
Chapter nine Scaling and Microstructure results on Electromigration Reliability for Cu Interconnects (pages 291–337): Chao?Kun Hu, Rene Hubner, Lijuan Zhang, Meike Hauschildt and Paul S. Ho
Chapter 10 Mechanical Reliability of Low?k Dielectrics (pages 339–367): Kris Vanstreels, Han Li and Joost J. Vlassak
Chapter eleven electric Breakdown in complicated Interconnect Dielectrics (pages 369–434): Ennis T. Ogawa and Oliver Aubel
Chapter 12 3D Interconnect know-how (pages 435–490): John U. Knickerbocker, Lay Wai Kong, Sven Niese, Alain Diebold and Ehrenfried Zschech
Chapter thirteen Carbon Nanotubes for Interconnects (pages 491–502): Mizuhisa Nihei, Motonobu Sato, Akio Kawabata, Shintaro Sato and Yuji Awano
Chapter 14 Optical Interconnects (pages 503–542): Wim Bogaerts
Chapter 15 instant Interchip Interconnects (pages 543–563): Takamaro Kikkawa

Show description

Read or Download Advanced Interconnects for ULSI Technology PDF

Similar design books

Michael F. Ashby's Materials Selection in Mechanical Design (4th Edition) PDF

Figuring out fabrics, their homes and behaviour is key to engineering layout, and a key software of fabrics technology. Written for all scholars of engineering, fabrics technological know-how and layout, this publication describes the methods for cloth choice in mechanical layout in an effort to make sure that the main appropriate fabrics for a given program are pointed out from the total variety of fabrics and part shapes to be had.

Foundation Game Design with Flash by Rex van der Spuy PDF

We've all sneaked the extraordinary 5 mins right here or there enjoying the newest Flash video game that somebody despatched around the workplace, yet growing these video games is trickier than it seems to be. the purpose of beginning video game layout with Flash is to take you, no matter if you've minimum multimedia or programming event, via a sequence of step by step examples and certain case reviews to the purpose the place you'll have the talents to independently layout any feasible second video game utilizing Flash and ActionScript.

Swen Günther's Design for Six Sigma: Konzeption und Operationalisierung von PDF

Bis dato liegt kein layout for 6 Sigma-Zyklus vor, der jeweils zu kundenoptimalen Produkten respektive Prozessen führt. Swen Günther analysiert diesen Sachverhalt erstmals wissenschaftlich und zeigt neue, cutting edge Lösungsansätze auf. Die abgeleiteten Vorgehensmodelle werden an zwei Praxisbeispielen explorativ überprüft.

Characterization and Modeling of Digital Circuits - download pdf or read online

This ebook presents a finished evaluation of characterization recommendations and complicated modeling of VLSI circuits for contemporary and complex approach nodes. meant viewers contains study execs, graduate scholars, circuit and PDK designers, characterization engineers, CAD builders, managers, mentors, and the in simple terms curious.

Extra resources for Advanced Interconnects for ULSI Technology

Example text

1), plasma-enhanced chemical vapor deposition (PECVD) has been the method of choice for depositing silicon dioxide (SiO2), fluorine-doped oxides (F-SiO2), carbon-doped oxides (SiCOH: elementally descriptive but not representing the stoichiometry) and porous carbon-doped oxides (p-SiCOH). 7) technology nodes in 2004 and 2006, respectively. 1). Interestingly, the real IBM technology node/dielectric constant relationship differs significantly from the targets proposed by the NTRS in 1997. This shows the danger of predicting dielectric targets based solely on engineering designs when new materials are not readily available.

One novel integration approach combines both hybrid integration (useful for minimizing ILD damage at the trench level) and a new concept referred to as ‘effective porogen control’ (ECB) [126]. e. the via level, to less than 70 %. The remaining porogen effectively increases the carbon content of this layer protecting the via level. The remaining porogen is partially removed during the plasma processing steps (trench level), followed by a thermal cure after a complete DD build. 4 Material Advances to Overcome Current Limitations In the search for improved mechanical properties of highly porous materials, two candidates have emerged over the past few years.

Barrier layer deposition and 2. Cu plating. The barrier is generally a bilayer consisting of a metal nitride and a barrier metal to protect the ILD from Cu migration/penetration and typical examples are TaN/Ta and TiN/Ti. The function of the metal nitride is to provide excellent adhesion to the ILD, whereas the barrier metal provides an optimum interface to the Cu. For maximum effectiveness, this barrier layer needs to be continuous and without defects and pinholes. 3 (h) [48, 49]. However, as line and via dimensions shrink in accordance with future technology nodes, thinner barrier layers are needed to maintain or improve electrical performance.

Download PDF sample

Advanced Interconnects for ULSI Technology by Mikhail Baklanov, Paul S. Ho, Ehrenfried Zschech


by Charles
4.2

Rated 4.46 of 5 – based on 22 votes